PART |
Description |
Maker |
EN29LV800B EN29LV800B70RS EN29LV800B70RSI EN29LV80 |
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory/ CMOS 3.0 Volt-only
|
ETC Eon Silicon Solution
|
EN29LV800CB-70BIP EN29LV800CB-70BAP EN29LV800CB-70 |
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
|
Eon Silicon Solution Inc.
|
EN29LV800T70RS EN29LV800T70RSI EN29LV800T70RSIP EN |
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
|
Eon Silicon Solution Inc. ETC
|
EN29SL800T-90TC EN29SL800T-90TCP EN29SL800T-90TI E |
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 1.8 Volt-only
|
Eon Silicon Solution Inc.
|
MBM29LV004TC-12 MBM29LV004TC-90PNS MBM29LV004TC-70 |
4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 120 ns, PDSO40 4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 70 ns, PDSO40 4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 90 ns, PDSO40 IC, LN PWR DC2DC CONVERT 48VDC-5VDC 1.2A MFR 4M (512K X 8) BIT
|
FUJITSU LTD Fujitsu, Ltd. Fujitsu Limited Fujitsu Component Limited.
|
A29800 A29800UV-90 A29800UM-90 A29800TM-90 A29800T |
240 x 128 pixel format, LED or EL Backlight 1024K × 8 16位为512k ×电压的CMOS 5.0只,引导扇区闪存 1024K X 8 Bit / 512K X 16 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory 1024K × 8 16位为512k ×电压的CMOS 5.0只,引导扇区闪存 PULSER PROBE 1024K × 8 16位为512k ×电压的CMOS 5.0只,引导扇区闪存 Aerials (Antennas); Bandwidth Max:500MHz; For Use With:Hand-Held Spectrum Analyzer; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No 1024K × 8 16位为512k ×电压的CMOS 5.0只,引导扇区闪存 Dipole Antenna; Bandwidth Max:2.2GHz; For Use With:Hand-Held Spectrum Analyzer; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No 1024K × 8 16位为512k ×电压的CMOS 5.0只,引导扇区闪存 240 x 128 pixel format, CFL Backlight with power harness 128 x 64 pixel format, LED Backlight available
|
AMIC Technology, Corp. AMIC Technology Corporation
|
EN29LV160B-70TP EN29LV160B-90BP EN29LV160B-90TIP E |
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only 16兆位048K × 8 1024K x 16位)闪存引导扇区闪存,CMOS 3.0伏,
|
Eon Silicon Solution, Inc.
|
EN29LV160JB70S EN29LV160JB70SI EN29LV160JB70SIP EN |
Replaced by PTN78000W : 16兆位048K × 8 1024K x 16位)闪存引导扇区闪存,CMOS 3.0伏, Replaced by PTN78000W : 8VOUT 1A WIDE INPUT POSITIVE STEP-DOWN ISR 3-SIP MODULE 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
|
Electronic Theatre Controls, Inc. http:// List of Unclassifed Manufacturers List of Unclassifed Manufac...
|
EN29SL160T-90MIP EN29SL160T-90BC EN29SL160T-90BCP |
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory
|
Eon Silicon Solution Inc.
|
V29C51000T-45P V29C51000T-45T V29C51000T-45J V29C5 |
512K BIT 65,536 x 8 BIT 5 VOLT CMOS FLASH MEMORY 512k5536 × 85伏的CMOS闪存 512K BIT 65,536 x 8 BIT 5 VOLT CMOS FLASH MEMORY 12k5536 × 8伏的CMOS闪存
|
Mosel Vitelic, Corp.
|
IS61LPD102418A-200TQI IS61LPD102418A-200B3 IS61LPD |
512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM 512K X 36 CACHE SRAM, 3.1 ns, PQFP100 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM 512K X 36 CACHE SRAM, 2.6 ns, PQFP100
|
Integrated Silicon Solution, Inc. INTEGRATED SILICON SOLUTION INC
|
LE25FW808 |
8M-bit (1024K X 8) Serial Flash Memory
|
Sanyo Semicon Device
|